BUZ906 DATASHEET PDF

BUZ from TT ELECTRONICS / SEMELAB >> Specification: MOSFET Transistor, P Channel, 8 A, V, ohm, Technical Datasheet: BUZ Datasheet. BUZ datasheet, BUZ pdf, BUZ data sheet, datasheet, data sheet, pdf, Magnatec, P-channel power MOSFET. Power MOSFETs for audio applications. BUZ Datasheet, BUZ PDF, BUZ Data sheet, BUZ manual, BUZ pdf, BUZ, datenblatt, Electronics BUZ, alldatasheet, free, datasheet.

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Output Stage with Driver Stage Rise Curve with Driver Stage This unique IC solution provides a quick and easy way to manufacture an ultra high-fidelity amplifier solution, with the piece-of-mind obtained from a fully optimized, stable design.

The LM is available in two grades of performance. The LM is available in a lead TO nonisolated power package. Basic information on how to choose a suitable MOSFET device, setting bias levels, performance optimizations, and performance results will be covered. The complete test schematic is included. The choice of device type and the design of the output stage of a power amplifier are determined by the design requirements and the preference of the designer. Thermal runaway issues are also much less of a concern with less sensitivity to temperature than a BJT device.

Some just prefer the sound of a MOSFET output stage compared to other devices, a highly subjective criteria but one that is important in the evaluation of an amplifier’s performance. The required output current is 5. The device needs to be able to supply more than 5. The other performance constraint of the LM is the minimum output drive current of 3mA 5.

Although an additional bkz906 stage can be employed to remove the LM’s drive current limitation, the design in this application report will be done with the LM driving the output stage directly. Devices with lower input capacitance are preferred but are not critical to a well performing design. The amount of drive current from the LM limits the number of devices in parallel that can be driven with a acceptable slew rate.

Additional devices in parallel will not be covered in this application report. The difference in output swing can be minimized through MOSFET selection and the elimination of degeneration resistors. Table 1 is not an exhaustive listing but represents those devices which are commonly used in MOSEFET amplifier designs, were available at the time of writing, and provide good audio performance.

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The VDSS and the ID datashset the requirements to meet the supply voltage and output current specifications with some headroom to spare. VGS is used to determine if correct bias can be achieved with 3V dagasheet less. This design and device selections may not be suitable for all speaker loads without violating the device’s Safe Operating Area SOA curves. Proper SOA design must be taken datashfet account for a commercial datashdet product.

Crossover distortion is the dominant distortion, yet this performance may be acceptable for some market segments. The amplifier consists of three buz960 blocks, the LM, the bias stage, and the output stage there are no protection circuits. Each stage will be covered in detail. The power supply design will not be covered as a basic unregulated supply consisting of a transformer, a daatasheet rectifier, with noise and reservoir capacitors is well known and common.

The LM, with feedback from the output stage, sets the gain and is externally compensated to set the slew rate. The outputs of the LM drive the top and bottom sides of the bias and output stages.

The LM performance details are limited to basic recommendations on ranges for gain, slew rate, and the component types that achieve the best performance. The bias datasehet performs two functions. Second, it allows thermal compensation that maintains steady bias current as the output stage devices vary in temperature. As will bu9z06 shown, certain devices buz90 not need temperature datashet and the bias stage becomes as datashet as a resistor. Other devices will need thermal tracking and temperature compensation controlled by the bias stage.

The output stage is a basic Source-Follower stage using a single pair of complementary N-channel buz9006 Pchannel transistors for simplicity. The same output stage design will be used for all devices datasbeet in Table 1. The circuit shown in Figure 2 is a non-inverting configuration.

For sonic quality, the design does not use bbuz906 AC coupling, DC blocking capacitor. The CN capacitor shunts high frequency noise present at the input to ground.

The compensation capacitor, CC, sets the slew rate and phase margin to ensure oscillation-free operation. RS should not be set too low as to cause loading of the source. Setting the resistors to equal values in the associated pairs ensures that the input bias currents will have negligible effect on the input offset voltage. An additional film capacitor used in parallel may improve the sonic quality. Eliminating the input capacitor will give the best sonic performance.

This capacitor’s value should be set using the same recommendations fatasheet to selecting the input capacitor’s value. This capacitor may be any type and the value is typically 15pF – 47pF. Large value current reservoir capacitors in parallel with smaller film capacitors are recommend at the power supply and at the PCB supply terminals.

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In addition, film capacitor bypassing is recommended at each supply pin of each active device. Bias Stage This section will cover two different bias stages; a basic, non-temperature compensated bias design and one with thermal tracking and temperature compensation. A non-compensated design involves a simple resistor or potentiometer for easy bias adjustment and a capacitor.

Figure 3 shows the simple bias stage design. The additional resistor, RB2, is used to set a minimum bias voltage while the potentiometer is used to adjust the bias level as desired. RBG helps to reduce the 2nd harmonic. For thermal tracking with temperature compensation, the very useful Datqsheet multiplier is used as shown in Figure 4.

Resistor Bias Stage Figure 4. Using Ohm’s Law again, the voltage across RB1 is equal to: The bias voltage will change with temperature when Q1 is mounted to the same heat sink as the output devices.

The thermal feedback and temperature compensation works as follows. For a given bias voltage, the output stage’s bias current will increased as the temperature increases. However, since Q1 is mounted along side the output devices, its Figure 4 VBE voltage will decrease with increased temperature.

This reduces the current through resistors connected to Q1’s base, which results in a reduction of bias voltage. This negative feedback produces a bias voltage that changes in order to maintain a stable bias current in the output stage. Higher bias current reduces harmonic distortion levels.

At some point there is little reduction with increased bias current and resulting power dissipation. A datashedt in the bias current level must be made between THD performance and power dissipation. The measurement equipment is set to notch out the fundamental frequency of the test signal. The fundamental is reduced datashee more than dB relative to 0dB.

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The first graph, Figure 5, has a bias current of 50mA and shows a case of insufficient bias current. The result is THD that is dominated by crossover distortion. This is indicated by the high level datazheet number of harmonics. Figure 6 shows the residual harmonics on an oscilloscope and clearly crossover distortion is dominant.

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Increasing the bias current to mA reduces the magnitude of the harmonics as shown in the FFT of Figure 7 and the oscilloscope view in Figure 8.

Figure 9 and Figure 10 show the harmonic content when the bias is pushed all the buz96 to mA. Similar results using the same bias current levels can be observed with any of the devices listed in Table 1.

The maximum bias voltage obtained was 7.

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