The 1N axial leaded Schottky rectifier has been optimized for very low forward ers, free-wheeling diodes, and reverse battery protection. Low profile, axial. The 1N58xx is a series of medium power, fast, low voltage Schottky diodes, which consists of part number numbers 1N through 1N This series employs the Schottky Barrier principle in a large area metal−to− silicon power diode. State−of−the−art geometry features chrome barrier metal.

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Communications Equipment, Computers and Peripherals. Packaged in DO these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.

1N – 20 V, 1 A axial Power Schottky Rectifier – STMicroelectronics

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1N58xx Schottky diodes – Wikipedia

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Key Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Avalanche capability specified. Tools and Software Development Tools. Getting started with eDesignSuite 5: Getting started with eDesignSuite. Product is in volume production Evaluation: Product djode under characterization.

Limited Engineering samples available Preview: Product is in design stage Target: Product is in design feasibility stage.

No commitment taken to produce Proposal: Marketing proposal for customer feedback. No commitment taken to design or produce NRND: Not Recommended for New Design. Product is in volume production only to support customers ongoing production. Product is in volume production 0. No availability reported, please contact our Sales office.


1N5817: 20 V, 1.0 A Schottky Rectifier

Distributor Name Region Stock Min. Low drop power Schottky rectifier. Calculation of conduction losses in a power rectifier.


Calculation of reverse losses in a power diode. How to choose a bypass diode for silicon panel junction box.

Schottky diode avalanche performance in automotive applications. Tj max limit of Schottky diodes. Product is in volume production. Free Sample Add to cart.

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